10-11am, August 26, 2025  Zoom

The Multi-Trigger Resist

Novel resist materials are required to support the ongoing improvement of EUV lithography. Resolution, roughness and dose requirements will continue to become more severe. In addition, depth of focus will be significantly reduced with the move to High-NA, necessitating reductions of the thickness of both resist and underlayer, and in turn the need for increased EUV photon absorption and etch durability, to enable viable patterning and pattern transfer. Irresistible Materials (IM) is developing novel resists based on the multi-trigger concept. The multi-trigger resists are negative-tone organic molecular materials, based on cationic ring opening polymerization. In a multi-trigger resist (MTR) multiple elements must be simultaneously activated to enable the catalytic reaction. Chemical contrast and resolution are therefore enhanced due to a dose dependent intrinsic quenching behaviour, and MTR shows good lithographic results and wide flexibility. Here we present recent progress with the MTR. Pitch 28 L/S patterning is demonstrated at 50 mJ/cm2, with 105 nm focus margin. Larger pitch L/S patterning with low roughness and a sub-30mJ/cm2 dose, suitable for double patterning applications has been investigated. P32 pillars, with 2.5 nm LCDU, and low dose (<40 mJ/cm2) and p32 contact hole patterning has also been demonstrated.