4-5pm, March 14, 2025

Unraveling electron-driven chemistry in EUV lithography: Advancing resist characterization and next-generation materials

Extreme ultraviolet (EUV) lithography has transformed semiconductor manufacturing, enabling the continued miniaturization of device features. However, the development of high-performance EUV photoresists remains a significant challenge due to the complex interplay between photon- and electron-driven chemical reactions. While EUV photons initiate resist exposure, electrons predominantly dictate reaction pathways. A deeper understanding of electron-induced chemistry is crucial for unlocking new strategies to control resist performance and enhance patterning precision.

Oleg Kostko will present research from the Center for X-Ray Optics (CXRO) focused on gaining a fundamental understanding of the light-matter interactions governing EUV lithography. He recently developed methodologies that provide deeper insights into key processes, including EUV photons absorption, electron emission, and subsequent chemical reactions. By investigating how different resist components influence each stage of this process—from photon absorption to chemical transformation—the center uncovered critical mechanisms that dictate resist behavior. Additionally, Oleg will discuss high-throughput approaches developed to rapidly screen novel resist materials and evaluate their chemical transformations under EUV-relevant conditions. Finally, he will explore the broader implications of these advancements, including their potential role in the development of next-generation lithography technologies. By addressing fundamental challenges in resist chemistry and characterization, this research paves the way for the development of more efficient materials that will drive the future of nanofabrication.